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1
A Design of Low Noise InP HEMT LNA based on device modeling:
, In:
2023 14th International Conference on Information and Communication Technology Convergence (ICTC)
,
Seo, Ji-Seung
;
Chae, Soo-Chang
;
Ahn, Kwang-Ho
. - p. 1569-1571 , 2023
Link:
https://doi.org/10.1109/ICTC58733.2023.10392657
RT T1 <cTitle>2023 14th International Conference on Information and Communication Technology Convergence (ICTC)</cTitle>: T1 <Title>A Design of Low Noise InP HEMT LNA based on device modeling</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10392657&Exemplar=1&LAN=DE A1 Seo, Ji-Seung A1 Chae, Soo-Chang A1 Ahn, Kwang-Ho A1 Kim, Ki-Jin YR 2023 SN 2162-1241 K1 Semiconductor device modeling K1 Semiconductor device measurement K1 Noise figure K1 Low-noise amplifiers K1 Impedance measurement K1 HEMTs K1 Transistors K1 5G K1 InP HEMT K1 LNA K1 Low Noise Amplifier K1 Device modeling K1 ASM-HEMT K1 n79 K1 Source-pull K1 Noise model SP 1569 OP 1571 LK http://dx.doi.org/https://doi.org/10.1109/ICTC58733.2023.10392657 DO https://doi.org/10.1109/ICTC58733.2023.10392657 SF ELIB - SuUB Bremen
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