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1 Ergebnisse
1
A Gate Voltage Clamping Method to Improve the Short-Circuit..:
, In:
2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
,
Ouyang, Wenyuan
;
Sun, Pengju
;
Xie, Minghang
.. - p. 287-292 , 2023
Link:
https://doi.org/10.1109/PEAS58692.2023.10395286
RT T1 <cTitle>2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)</cTitle>: T1 <Title>A Gate Voltage Clamping Method to Improve the Short-Circuit Characteristic of SiC MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10395286&Exemplar=1&LAN=DE A1 Ouyang, Wenyuan A1 Sun, Pengju A1 Xie, Minghang A1 Hu, Yingpeng A1 Ma, Xing YR 2023 K1 MOSFET K1 Silicon carbide K1 Voltage K1 Switches K1 Logic gates K1 Power electronics K1 Clamps K1 power MOSFETs K1 short-circuit withstand time K1 short-circuit protection K1 voltage clamping K1 hard switching fault K1 fault under load K1 silicon carbide SP 287 OP 292 LK http://dx.doi.org/https://doi.org/10.1109/PEAS58692.2023.10395286 DO https://doi.org/10.1109/PEAS58692.2023.10395286 SF ELIB - SuUB Bremen
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