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1 Ergebnisse
1
Recoverable Current Collapse Effect of p-GaN HEMTs Under Sh..:
, In:
2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
,
Wang, Meng
;
Li, Xiangdong
;
Zhang, Jincheng
... - p. 141-144 , 2023
Link:
https://doi.org/10.1109/PEAS58692.2023.10395456
RT T1
2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
: T1
Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress
UL https://suche.suub.uni-bremen.de/peid=ieee-10395456&Exemplar=1&LAN=DE A1 Wang, Meng A1 Li, Xiangdong A1 Zhang, Jincheng A1 Wang, Hongyue A1 Wang, Junbo A1 Han, Zhanfei A1 Yuan, Jiahui A1 Hao, Yue YR 2023 K1 Metals K1 High-voltage techniques K1 Logic gates K1 HEMTs K1 Wide band gap semiconductors K1 Interface states K1 Gate leakage K1 recoverable K1 current collapse K1 BTI K1 p-GaN SP 141 OP 144 LK http://dx.doi.org/https://doi.org/10.1109/PEAS58692.2023.10395456 DO https://doi.org/10.1109/PEAS58692.2023.10395456 SF ELIB - SuUB Bremen
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