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1 Ergebnisse
1
Development of 1200V 150A High Temperature High Current SiC..:
, In:
2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
,
Luo, Yehui
;
Li, Chengzhan
;
Zheng, Changwei
... - p. 1655-1658 , 2023
Link:
https://doi.org/10.1109/PEAS58692.2023.10395667
RT T1 <cTitle>2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)</cTitle>: T1 <Title>Development of 1200V 150A High Temperature High Current SiC JBS Diodes</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10395667&Exemplar=1&LAN=DE A1 Luo, Yehui A1 Li, Chengzhan A1 Zheng, Changwei A1 Wang, Yafei A1 Bai, Yun A1 Tang, Yidan YR 2023 K1 Schottky diodes K1 Temperature K1 Silicon carbide K1 Switches K1 Voltage K1 Silicon K1 Leakage currents K1 Silicon Carbide K1 Junction barrier Schottky diode K1 High temperature K1 High current density SP 1655 OP 1658 LK http://dx.doi.org/https://doi.org/10.1109/PEAS58692.2023.10395667 DO https://doi.org/10.1109/PEAS58692.2023.10395667 SF ELIB - SuUB Bremen
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