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1 Ergebnisse
1
Comparing Electrical Performance of Lateral GaN Schottky Ba..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Zhou, Jiaan
;
Yu, Guohao
;
Hao, Chunfeng
. - p. 215-217 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039948
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Comparing Electrical Performance of Lateral GaN Schottky Barrier Diode with A-Plane ($11\bar2 0$) and M-Plane ($1\bar1 00$) Nonpolar Sidewall Contact</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399486&Exemplar=1&LAN=DE A1 Zhou, Jiaan A1 Yu, Guohao A1 Hao, Chunfeng A1 Zhang, Xinping YR 2023 K1 Performance evaluation K1 Atomic measurements K1 Schottky diodes K1 Contacts K1 Schottky barriers K1 Crystals K1 Wide band gap semiconductors SP 215 OP 217 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399486 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399486 SF ELIB - SuUB Bremen
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