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1 Ergebnisse
1
A Novel SiC Trench MOSFET with Unilateral P Buried Layer fo..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Wu, Yangyang
;
Yuan, Jun
;
Wang, Kuan
... - p. 35-38 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039965
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>A Novel SiC Trench MOSFET with Unilateral P Buried Layer for Improved Oxide Electric Field and Switching Loss</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399651&Exemplar=1&LAN=DE A1 Wu, Yangyang A1 Yuan, Jun A1 Wang, Kuan A1 Guo, Fei A1 Chen, Wei A1 Cheng, Zhijie A1 Xu, Shaodong A1 Xin, Guoqing A1 Wang, Zhiqiang YR 2023 K1 MOSFET K1 Schottky diodes K1 Silicon carbide K1 Schottky barriers K1 Switching loss K1 High-voltage techniques K1 Voltage SP 35 OP 38 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399651 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399651 SF ELIB - SuUB Bremen
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