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1 Ergebnisse
1
High Saturation Current HEMTs with ε-Ga2O3/m-GaN Heterojunc..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Guo, Tao
;
Wu, Chang
;
Liu, Jielong
... - p. 242-245 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039966
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>High Saturation Current HEMTs with ε-Ga2O3/m-GaN Heterojunctions Towards a Potential Candidate for Radio Frequency Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399666&Exemplar=1&LAN=DE A1 Guo, Tao A1 Wu, Chang A1 Liu, Jielong A1 Wang, Kai A1 Wu, Jiayan A1 Zeng, Yulei A1 Xiong, Xin A1 Zhang, Tao A1 Wang, Yu A1 Zhou, Rui A1 Huang, Zhen A1 Yuan, Jun A1 Yang, Bing YR 2023 K1 Performance evaluation K1 Electric potential K1 Simulation K1 Cutoff frequency K1 Voltage K1 HEMTs K1 Heterojunctions SP 242 OP 245 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399666 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399666 SF ELIB - SuUB Bremen
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