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1 Ergebnisse
1
AlGaN/AlN/GaN High Electron Mobility Transistor Electromagn..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Gen, Li
;
Yang, Wu
;
Linmei, Ma
... - p. 233-237 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039967
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>AlGaN/AlN/GaN High Electron Mobility Transistor Electromagnetic Physical Model: Simulation and Measurement</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399673&Exemplar=1&LAN=DE A1 Gen, Li A1 Yang, Wu A1 Linmei, Ma A1 Haofeng, Lin A1 Rong, Qian A1 Liang, Wu YR 2023 K1 Semiconductor device modeling K1 Radio frequency K1 Semiconductor device measurement K1 Measurement uncertainty K1 HEMTs K1 Data models K1 Wide band gap semiconductors K1 GaN HEMT K1 TCAD simulation K1 physical model K1 DC/RF SP 233 OP 237 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399673 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399673 SF ELIB - SuUB Bremen
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