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1 Ergebnisse
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Study of Vacuum Annealing Process of Ga2O3/4H-SiC Heterojun..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Shen, Yi
;
Yuan, Qilong
;
Ma, Hong-Ping
... - p. 305-308 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039967
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Study of Vacuum Annealing Process of Ga2O3/4H-SiC Heterojunction</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399674&Exemplar=1&LAN=DE A1 Shen, Yi A1 Yuan, Qilong A1 Ma, Hong-Ping A1 Qi, Xin A1 Wang, Anfeng A1 Jiang, Nan A1 Zhang, Qingchun Jon YR 2023 K1 Annealing K1 Gallium K1 Transmission electron microscopy K1 Photoelectron microscopy K1 Heterojunctions K1 Conductivity K1 Thermal conductivity SP 305 OP 308 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399674 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399674 SF ELIB - SuUB Bremen
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