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1 Ergebnisse
1
An Approach to GaN HEMT Modeling Based on Genetic Algorithm:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Zhao, W.
;
Zhao, Z. Y.
;
Yang, L.
.. - p. 276-278 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039967
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>An Approach to GaN HEMT Modeling Based on Genetic Algorithm</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399677&Exemplar=1&LAN=DE A1 Zhao, W. A1 Zhao, Z. Y. A1 Yang, L. A1 Zhang, M. A1 Lu, Y. YR 2023 K1 Semiconductor device modeling K1 Photonic band gap K1 Fitting K1 Logic gates K1 HEMTs K1 Mathematical models K1 Genetic algorithms K1 GA K1 GaN HEMT K1 matlab K1 large signal SP 276 OP 278 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399677 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399677 SF ELIB - SuUB Bremen
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