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1 Ergebnisse
1
Ultra-Low On-Resistance SiC LDMOS With Separated-Protected ..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Zhang, Luanxi
;
Huang, Linyang
;
Hu, Pengfei
... - p. 96-99 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039967
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399678&Exemplar=1&LAN=DE A1 Zhang, Luanxi A1 Huang, Linyang A1 Hu, Pengfei A1 Zhang, Chi A1 Wang, Ce A1 Wang, Hengyu A1 Sheng, Kuang YR 2023 K1 Resistance K1 Dielectric constant K1 Silicon carbide K1 Photonic band gap K1 Refining K1 Doping K1 Logic gates SP 96 OP 99 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399678 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399678 SF ELIB - SuUB Bremen
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