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1 Ergebnisse
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Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Qu, Zifeng
;
Jiang, Yizhou
;
Zhang, Yichi
. - p. 183-186 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039969
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399690&Exemplar=1&LAN=DE A1 Qu, Zifeng A1 Jiang, Yizhou A1 Zhang, Yichi A1 Wen, Huiqing YR 2023 K1 Fabrication K1 Photonic band gap K1 Logic gates K1 HEMTs K1 Threshold voltage K1 Wide band gap semiconductors K1 Performance analysis SP 183 OP 186 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399690 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399690 SF ELIB - SuUB Bremen
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