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1 Ergebnisse
1
Growth of 150 mm 4H-SiC Epilayers with Low Surface Roughnes..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Yan, Guoguo
;
Liu, Xingfang
;
Zhao, Wanshun
... - p. 10-13 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039969
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Growth of 150 mm 4H-SiC Epilayers with Low Surface Roughness by a Hot-Wall Reactor on 4° off- Axis Substrates</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399692&Exemplar=1&LAN=DE A1 Yan, Guoguo A1 Liu, Xingfang A1 Zhao, Wanshun A1 Wang, Lei A1 Shen, Zhanwei A1 Fu, Zhen A1 Zhang, Quan A1 Xiao, Chao A1 Yin, Qiang A1 Sun, Guosheng A1 Zeng, Yiping YR 2023 K1 Mass production K1 X-ray scattering K1 Epitaxial layers K1 Doping K1 Surface roughness K1 Epitaxial growth K1 Rough surfaces SP 10 OP 13 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399692 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399692 SF ELIB - SuUB Bremen
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