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Simulation of Epitaxial Growth of Silicon Carbide in a Hori..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Tian, Jing
;
Tang, Zhuorui
;
Tang, Hongyu
.. - p. 14-17 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039970
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Simulation of Epitaxial Growth of Silicon Carbide in a Horizontal Hot-wall CVD Reaction Chamber</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399702&Exemplar=1&LAN=DE A1 Tian, Jing A1 Tang, Zhuorui A1 Tang, Hongyu A1 Fan, Jiajie A1 Zhang, Guoqi YR 2023 K1 Temperature distribution K1 Solid modeling K1 Silicon carbide K1 Photonic band gap K1 Simulation K1 Fluid flow K1 Epitaxial growth K1 SiC K1 CVD K1 Multiphysics simulation SP 14 OP 17 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399702 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399702 SF ELIB - SuUB Bremen
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