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1 Ergebnisse
1
Total Ionizing Effects on Static Characteristics of 1200V S..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Luo, Runding
;
Duan, Yuhan
;
Sun, Botao
... - p. 88-91 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039970
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399707&Exemplar=1&LAN=DE A1 Luo, Runding A1 Duan, Yuhan A1 Sun, Botao A1 Zhang, Jon Qingchun A1 Fan, Jiajie A1 Liu, Pan YR 2023 K1 Degradation K1 MOSFET K1 Silicon carbide K1 Radiation hardening (electronics) K1 Photonic band gap K1 Logic gates K1 Silicon K1 SiC MOSFET K1 Total Ionizing Dose K1 Planar and Trench Structures K1 Static Characteristic SP 88 OP 91 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399707 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399707 SF ELIB - SuUB Bremen
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