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1 Ergebnisse
1
Fabrication and Characterization of 750V SiC MOSFET for New..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Guo, Rui
;
Li, Shiyan
;
Yang, Xiaolei
... - p. 57-60 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039970
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Fabrication and Characterization of 750V SiC MOSFET for New Energy Vehicles</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399708&Exemplar=1&LAN=DE A1 Guo, Rui A1 Li, Shiyan A1 Yang, Xiaolei A1 Huang, Runhua A1 Wang, Haichuan A1 Bai, Song YR 2023 K1 Fabrication K1 MOSFET K1 Silicon carbide K1 Power supplies K1 Multichip modules K1 Switches K1 Doping K1 SiC K1 High Current Density K1 SiC MOSFET K1 Power Module SP 57 OP 60 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399708 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399708 SF ELIB - SuUB Bremen
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