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1 Ergebnisse
1
Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructu..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Li, Ang
;
Wang, Chong
;
Zheng, Xuefeng
... - p. 230-232 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039970
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399709&Exemplar=1&LAN=DE A1 Li, Ang A1 Wang, Chong A1 Zheng, Xuefeng A1 Ma, Xiaohua A1 He, Yunlong A1 Liu, Kai A1 Zhao, Yaopeng A1 Hao, Yue YR 2023 K1 Photonic band gap K1 Linearity K1 Logic gates K1 Software K1 Wide band gap semiconductors K1 Current density K1 Aluminum gallium nitride SP 230 OP 232 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399709 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399709 SF ELIB - SuUB Bremen
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