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1
Study of PEALD-AlN as Dielectric Layer in GaN MIS-HEMTs:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Zhang, Xuanming
;
Fu, Xiang
;
Zhang, Yuanlei
... - p. 181-182 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039971
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Study of PEALD-AlN as Dielectric Layer in GaN MIS-HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399714&Exemplar=1&LAN=DE A1 Zhang, Xuanming A1 Fu, Xiang A1 Zhang, Yuanlei A1 Duan, Jiachen A1 Kong, Zhijie A1 Liu, Wen YR 2023 K1 Radio frequency K1 Temperature K1 Threshold voltage K1 Silicon K1 Dielectrics K1 III-V semiconductor materials K1 Gallium nitride SP 181 OP 182 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399714 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399714 SF ELIB - SuUB Bremen
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