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1 Ergebnisse
1
4H-SiC Trench MOSFET with Half-Surrounded Gate for Improved..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Chen, Wei
;
Yuan, Jun
;
Guo, Fei
... - p. 31-34 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039971
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>4H-SiC Trench MOSFET with Half-Surrounded Gate for Improved Gate Oxide Reliability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399719&Exemplar=1&LAN=DE A1 Chen, Wei A1 Yuan, Jun A1 Guo, Fei A1 Wu, Yangyang A1 Chen, Zhijie A1 Wang, Kuan A1 Xin, Guoqing A1 Wang, Zhiqiang YR 2023 K1 MOSFET K1 Silicon carbide K1 Photonic band gap K1 Epitaxial layers K1 Simulation K1 Switches K1 Logic gates SP 31 OP 34 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399719 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399719 SF ELIB - SuUB Bremen
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