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1 Ergebnisse
1
A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operatio..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Mo, Jianghui
;
Sun, Shaoyu
;
Zhang, Lijiang
... - p. 173-176 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039973
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operation at 100V Bias</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399731&Exemplar=1&LAN=DE A1 Mo, Jianghui A1 Sun, Shaoyu A1 Zhang, Lijiang A1 Xu, Shouli A1 Huang, Luoguang A1 He, Jiayin A1 Cui, Yuxing A1 Wang, Jinyan A1 Cai, Shujun A1 Wu, Wengang YR 2023 K1 Breakdown voltage K1 Silicon carbide K1 Photonic band gap K1 Power amplifiers K1 HEMTs K1 Wide band gap semiconductors K1 Ohmic contacts SP 173 OP 176 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399731 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399731 SF ELIB - SuUB Bremen
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