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1
Comparison of Random and Channeled Implants of Al Ion into ..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Ge, Huan
;
Wang, Rui
;
Yan, Jingrong
... - p. 125-128 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039973
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Comparison of Random and Channeled Implants of Al Ion into 4H-SiC (0001)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399735&Exemplar=1&LAN=DE A1 Ge, Huan A1 Wang, Rui A1 Yan, Jingrong A1 Zhou, Hang A1 Zhu, Tao A1 Li, Zheyang A1 Jin, Rui YR 2023 K1 Temperature measurement K1 Atomic measurements K1 Vibrations K1 Silicon carbide K1 Photonic band gap K1 Implants K1 Ions SP 125 OP 128 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399735 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399735 SF ELIB - SuUB Bremen
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