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1 Ergebnisse
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Based on 0.15μm GaAs Process X-Band Low Power Low Noise Amp..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Zhao, W.
;
Zhao, Z. Y.
;
Lu, Y.
... - p. 279-282 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039973
RT T1
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
: T1
Based on 0.15μm GaAs Process X-Band Low Power Low Noise Amplifier
UL https://suche.suub.uni-bremen.de/peid=ieee-10399739&Exemplar=1&LAN=DE A1 Zhao, W. A1 Zhao, Z. Y. A1 Lu, Y. A1 Yang, L. A1 Yi, C. P. A1 Feng, T. A1 Liu, X. YR 2023 K1 Low-noise amplifiers K1 Power demand K1 Negative feedback K1 Simulation K1 Gallium arsenide K1 PHEMTs K1 Radar applications K1 Low noise amplifier K1 GaAs K1 Low power K1 Current multiplexing K1 MMIC SP 279 OP 282 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399739 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399739 SF ELIB - SuUB Bremen
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