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Optimization of 1700V 4H-SiC Semi-Superjunction Schottky Di..:
, In:
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Wang, Kuan
;
Yuan, Jun
;
Wu, Yangyang
... - p. 65-67 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS60785.2023.1039974
RT T1 <cTitle>2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Optimization of 1700V 4H-SiC Semi-Superjunction Schottky Diode with Multi-Step Trenched Structure</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10399743&Exemplar=1&LAN=DE A1 Wang, Kuan A1 Yuan, Jun A1 Wu, Yangyang A1 Guo, Fei A1 Cheng, Zhijie A1 Chen, Wei A1 Peng, Ruoshi YR 2023 K1 Schottky diodes K1 Silicon carbide K1 Photonic band gap K1 Surface resistance K1 Simulation K1 Surface morphology K1 Morphology SP 65 OP 67 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399743 DO https://doi.org/10.1109/SSLChinaIFWS60785.2023.10399743 SF ELIB - SuUB Bremen
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