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1 Ergebnisse
1
A 2.5ns/200mW GaAs 4Kb SRAM:
, In:
1986 IEEE GaAs IC Symposium Technical Digest
,
Tanino, Noriyuki
;
Takano, Satoshi
;
Noda, Minoru
... - p. 101-104 , 1986
Link:
https://doi.org/10.1109/GAAS.1986.10400015
RT T1
1986 IEEE GaAs IC Symposium Technical Digest
: T1
A 2.5ns/200mW GaAs 4Kb SRAM
UL https://suche.suub.uni-bremen.de/peid=ieee-10400015&Exemplar=1&LAN=DE A1 Tanino, Noriyuki A1 Takano, Satoshi A1 Noda, Minoru A1 Makino, Hiroshi A1 Sumitani, Koichi A1 Nakano, Hirofumi A1 Nishitani, Kazuo A1 Kayano, Shimpei YR 1986 K1 Random access memory K1 Metals K1 Gallium arsenide K1 Power dissipation K1 Logic gates K1 Integrated circuit interconnections K1 Fabrication SP 101 OP 104 LK http://dx.doi.org/https://doi.org/10.1109/GAAS.1986.10400015 DO https://doi.org/10.1109/GAAS.1986.10400015 SF ELIB - SuUB Bremen
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