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1 Ergebnisse
1
Fully Integrated Overcurrent Protection Method During SiC M..:
, In:
2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)
,
Zhang, Haifeng
;
Zhang, Dibo
;
Hata, Katsuhiro
... - p. 1-8 , 2023
Link:
https://doi.org/10.1109/SPEC56436.2023.10407469
RT T1 <cTitle>2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)</cTitle>: T1 <Title>Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10407469&Exemplar=1&LAN=DE A1 Zhang, Haifeng A1 Zhang, Dibo A1 Hata, Katsuhiro A1 Wada, Keiji A1 Akatsu, Kan A1 Omura, Ichiro A1 Takamiya, Makoto YR 2023 SN 2832-2983 K1 Integrated circuits K1 Insulated gate bipolar transistors K1 MOSFET K1 Silicon carbide K1 Logic gates K1 Gate drivers K1 Delays K1 overcurrent K1 protection K1 gate driver K1 IC K1 gate voltage K1 SiC SP 1 OP 8 LK http://dx.doi.org/https://doi.org/10.1109/SPEC56436.2023.10407469 DO https://doi.org/10.1109/SPEC56436.2023.10407469 SF ELIB - SuUB Bremen
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