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1 Ergebnisse
1
Threshold Voltage Shift of SiC MOSFETs Induced by High Temp..:
, In:
2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)
,
Yu, Qingkui
;
Sun, Yi
;
Cao, Shuang
... - p. 1-5 , 2022
Link:
https://doi.org/10.1109/RADECS55911.2022.10412513
RT T1
2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)
: T1
Threshold Voltage Shift of SiC MOSFETs Induced by High Temperature Gate Bias and Total Ionizing Dose
UL https://suche.suub.uni-bremen.de/peid=ieee-10412513&Exemplar=1&LAN=DE A1 Yu, Qingkui A1 Sun, Yi A1 Cao, Shuang A1 Wang, He A1 Lv, He A1 Mei, Bo A1 Zhang, Chenrui YR 2022 SN 1609-0438 K1 MOSFET K1 Temperature distribution K1 Silicon carbide K1 Logic gates K1 Threshold voltage K1 Total ionizing dose K1 Transistors K1 MOSFETs K1 SiC K1 total ionizing dose effect K1 HTGB SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/RADECS55911.2022.10412513 DO https://doi.org/10.1109/RADECS55911.2022.10412513 SF ELIB - SuUB Bremen
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