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1 Ergebnisse
1
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using ..:
, In:
2023 International Electron Devices Meeting (IEDM)
,
Ito, Kenji
;
Narita, Tetsuo
;
Iguchi, Hiroko
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IEDM45741.2023.10413714
RT T1
2023 International Electron Devices Meeting (IEDM)
: T1
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
UL https://suche.suub.uni-bremen.de/peid=ieee-10413714&Exemplar=1&LAN=DE A1 Ito, Kenji A1 Narita, Tetsuo A1 Iguchi, Hiroko A1 Iwasaki, Shiro A1 Kikuta, Daigo A1 Kano, Emi A1 Ikarashi, Nobuyuki A1 Tomita, Kazuyoshi A1 Horita, Masahiro A1 Suda, Jun YR 2023 SN 2156-017X K1 MOSFET K1 Transmission electron microscopy K1 Microscopy K1 Doping K1 Logic gates K1 Wide band gap semiconductors K1 Stress SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45741.2023.10413714 DO https://doi.org/10.1109/IEDM45741.2023.10413714 SF ELIB - SuUB Bremen
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