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6500-V E-mode Active-Passivation p-GaN Gate HEMT with Ultra..:

, In: 2023 International Electron Devices Meeting (IEDM),
Cui, Jiawei ; Wei, Jin ; Wang, Maojun... - p. 1-4 , 2023
Link: https://doi.org/10.1109/IEDM45741.2023.10413742