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1 Ergebnisse
1
First Demonstration of Stacked 2T0C-DRAM Bit-Cell Construct..:
, In:
2023 International Electron Devices Meeting (IEDM)
,
Chen, Chuanke
;
Xiang, Jinjuan
;
Duan, Xinlv
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IEDM45741.2023.10413790
RT T1
2023 International Electron Devices Meeting (IEDM)
: T1
First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F2 Area Cost
UL https://suche.suub.uni-bremen.de/peid=ieee-10413790&Exemplar=1&LAN=DE A1 Chen, Chuanke A1 Xiang, Jinjuan A1 Duan, Xinlv A1 Lu, Congyan A1 Niu, Jiebin A1 Zhang, Kaiping A1 Liu, Yu A1 Lu, Nianduan A1 Jiao, Zhengying A1 Shen, Yongqing A1 Luan, Qingjie A1 Wang, Guilei A1 Zhao, Chao A1 Yang, Guanhua A1 Geng, Di A1 Li, Ling A1 Liu, Ming YR 2023 SN 2156-017X K1 Three-dimensional displays K1 Microprocessors K1 Field effect transistors K1 Stacking K1 Random access memory K1 Computer architecture K1 Reliability SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45741.2023.10413790 DO https://doi.org/10.1109/IEDM45741.2023.10413790 SF ELIB - SuUB Bremen
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