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1 Ergebnisse
1
<1ppm Device to Chip Level Reliability Characterization for..:
, In:
2023 International Electron Devices Meeting (IEDM)
,
Lee, N-H
;
Lee, S.
;
Kim, G J.
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IEDM45741.2023.10413846
RT T1
2023 International Electron Devices Meeting (IEDM)
: T1
<1ppm Device to Chip Level Reliability Characterization for High-Density DDR5 DRAMs
UL https://suche.suub.uni-bremen.de/peid=ieee-10413846&Exemplar=1&LAN=DE A1 Lee, N-H A1 Lee, S. A1 Kim, G J. A1 Kim, Y J. A1 Woo, B W. A1 Lee, Y Y. A1 Kim, H K. A1 Kim, E J. A1 Lee, Y S. A1 Hwang, Y C A1 Ko, S B. A1 Pae, S. YR 2023 SN 2156-017X K1 Degradation K1 Negative bias temperature instability K1 Semiconductor device measurement K1 Thermal variables control K1 Semiconductor device reliability K1 Integrated circuit reliability K1 Stress SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45741.2023.10413846 DO https://doi.org/10.1109/IEDM45741.2023.10413846 SF ELIB - SuUB Bremen
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