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1 Ergebnisse
1
A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter C..:
, In:
2023 International Electron Devices Meeting (IEDM)
,
Gao, Zhe
;
Park, Geunsook
;
Fu, Linda
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IEDM45741.2023.10413865
RT T1
2023 International Electron Devices Meeting (IEDM)
: T1
A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter CMOS Image Sensor with Dual Conversion Gain and 1.2e- FPN
UL https://suche.suub.uni-bremen.de/peid=ieee-10413865&Exemplar=1&LAN=DE A1 Gao, Zhe A1 Park, Geunsook A1 Fu, Linda A1 Chapinal, Genis A1 Yang, Joseph A1 Freson, Tom A1 Qin, Qing A1 Guo, Jiayu A1 Zhu, Fan A1 Ding, Shaomin A1 Lin, Zhiqiang A1 Hsiung, Alan Chih-Wei A1 Mabuchi, Keiji A1 Geurts, Tomas A1 Grant, Lindsay A. A1 Dai, T.J. YR 2023 SN 2156-017X K1 Wafer bonding K1 Performance evaluation K1 Stacking K1 Capacitors K1 Voltage K1 Transistors K1 Electron devices SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45741.2023.10413865 DO https://doi.org/10.1109/IEDM45741.2023.10413865 SF ELIB - SuUB Bremen
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