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1
Exploring manufacturability of novel 2D channel materials: ..:
, In:
2023 International Electron Devices Meeting (IEDM)
,
Dorow, C. J.
;
Schram, T.
;
Smets, Q.
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IEDM45741.2023.10413874
RT T1 <cTitle>2023 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10413874&Exemplar=1&LAN=DE A1 Dorow, C. J. A1 Schram, T. A1 Smets, Q. A1 O'Brien, K. P. A1 Maxey, K. A1 Lin, C.-C. A1 Panarella, L. A1 Kaczer, B. A1 Arefin, N. A1 Roy, A. A1 Jordan, R. A1 Oni, A. A1 Penumatcha, A. A1 Naylor, C. H. A1 Kavrik, M. A1 Cott, D. A1 Graven, B. A1 Afanasiev, V. A1 Morin, P. A1 Asselberghs, I. A1 Lockhart de La Rosa, C. J. A1 Sankar Kar, G. A1 Metz, M. A1 Avci, U. YR 2023 SN 2156-017X K1 Grain size K1 Performance evaluation K1 MOSFET K1 Contact resistance K1 Sulfur K1 Transistors K1 Molybdenum SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45741.2023.10413874 DO https://doi.org/10.1109/IEDM45741.2023.10413874 SF ELIB - SuUB Bremen
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