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An Efficient Extraction of the Bias Dependent Extrinsic Res..:
, In:
2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM)
,
Zatout, Boumediene
;
Maafri, Djabar
;
Kerai, Salim
. - p. 1-5 , 2023
Link:
https://doi.org/10.1109/IC2EM59347.2023.10419392
RT T1 <cTitle>2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM)</cTitle>: T1 <Title>An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10419392&Exemplar=1&LAN=DE A1 Zatout, Boumediene A1 Maafri, Djabar A1 Kerai, Salim A1 Belaroussi, Yasmine YR 2023 K1 Linear regression K1 Energy measurement K1 HEMTs K1 Transistors K1 Electrical resistance measurement K1 Integrated circuit modeling K1 Equivalent circuits K1 HEMT GaN/SiC K1 small-signal modeling K1 equivalent circuit K1 bias resistances dependent SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IC2EM59347.2023.10419392 DO https://doi.org/10.1109/IC2EM59347.2023.10419392 SF ELIB - SuUB Bremen
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