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1 Ergebnisse
1
Voltage Sharing Control With Gate Resistance Modulation for..:
, In:
2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT)
,
Lv, Jingyu
;
Zou, Runmin
- p. 360-364 , 2023
Link:
https://doi.org/10.1109/CEECT59667.2023.10420696
RT T1 <cTitle>2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT)</cTitle>: T1 <Title>Voltage Sharing Control With Gate Resistance Modulation for Series IGBTs During Turn-on and Turn-off</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10420696&Exemplar=1&LAN=DE A1 Lv, Jingyu A1 Zou, Runmin YR 2023 K1 Insulated gate bipolar transistors K1 Resistance K1 Resistors K1 Switches K1 Logic gates K1 Voltage control K1 Transient analysis K1 Current voltage K1 gate resistance control (GRC) K1 insulated gate bipolar transistor (IGBT) K1 turn-on and turn-off transients SP 360 OP 364 LK http://dx.doi.org/https://doi.org/10.1109/CEECT59667.2023.10420696 DO https://doi.org/10.1109/CEECT59667.2023.10420696 SF ELIB - SuUB Bremen
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