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1 Ergebnisse
1
The Research of GaN HEMT Transistor Input Gate Capacitance ..:
, In:
2023 Seminar on Microelectronics, Dielectrics and Plasmas (MDP)
,
Rodionov, Denis V.
;
Khlybov, Alexander I.
;
Kotlyarov, Evgeny Yu.
.. - p. 115-118 , 2023
Link:
https://doi.org/10.1109/MDP60436.2023.10424410
RT T1
2023 Seminar on Microelectronics, Dielectrics and Plasmas (MDP)
: T1
The Research of GaN HEMT Transistor Input Gate Capacitance Dependence as a Function of Operating Mode in GHz Band
UL https://suche.suub.uni-bremen.de/peid=ieee-10424410&Exemplar=1&LAN=DE A1 Rodionov, Denis V. A1 Khlybov, Alexander I. A1 Kotlyarov, Evgeny Yu. A1 Timoshenkov, Pavel V. A1 Guminov, Nikolay V. YR 2023 K1 Voltage measurement K1 Logic gates K1 Reflectometry K1 Capacitance K1 Transmission line measurements K1 Transistors K1 Time-domain analysis K1 GaN K1 HEMT K1 S-parameters K1 time-domain reflectometry K1 maximum gain frequency K1 GHz K1 gate-drain capacitance K1 gate-source capacitance SP 115 OP 118 LK http://dx.doi.org/https://doi.org/10.1109/MDP60436.2023.10424410 DO https://doi.org/10.1109/MDP60436.2023.10424410 SF ELIB - SuUB Bremen
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