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1 Ergebnisse
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Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1..:
, In:
2023 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE)
,
Mukherjee, Praskandan
;
Kashyap, Nitesh
;
Ranjan, Ravi
- p. 779-784 , 2023
Link:
https://doi.org/10.1109/AECE59614.2023.10428298
RT T1 <cTitle>2023 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE)</cTitle>: T1 <Title>Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa2O3 Layer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10428298&Exemplar=1&LAN=DE A1 Mukherjee, Praskandan A1 Kashyap, Nitesh A1 Ranjan, Ravi YR 2023 K1 Performance evaluation K1 Analytical models K1 HEMTs K1 Logic gates K1 Threshold voltage K1 High frequency K1 MODFETs K1 High Electron Mobility Transistor (HEMT) K1 Gallium oxide (Ga2O3) K1 Normally-OFF K1 Threshold Voltage K1 Ultrawide Bandgap Semiconductor SP 779 OP 784 LK http://dx.doi.org/https://doi.org/10.1109/AECE59614.2023.10428298 DO https://doi.org/10.1109/AECE59614.2023.10428298 SF ELIB - SuUB Bremen
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