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1
Modeling of the Turn-Off Transient Process and Influencing ..:
, In:
2023 3rd International Conference on New Energy and Power Engineering (ICNEPE)
,
Sun, Tong
;
Tian, Bowen
;
Cai, Yumeng
... - p. 454-461 , 2023
Link:
https://doi.org/10.1109/ICNEPE60694.2023.10429739
RT T1 <cTitle>2023 3rd International Conference on New Energy and Power Engineering (ICNEPE)</cTitle>: T1 <Title>Modeling of the Turn-Off Transient Process and Influencing Factors of Silicon Carbide MOSFET for Hybrid DC Circuit Breakers</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10429739&Exemplar=1&LAN=DE A1 Sun, Tong A1 Tian, Bowen A1 Cai, Yumeng A1 Zhang, Haoran A1 Sun, Peng A1 Zhao, Zhibin A1 Meng, Qingmeng A1 Chang, Zezhou YR 2023 K1 MOSFET K1 Silicon carbide K1 Circuit breakers K1 Voltage K1 Logic gates K1 Transient analysis K1 Integrated circuit modeling K1 metal-oxide-semiconductor field effect transistor K1 hybrid direct current circuit breaker K1 turn-off transient K1 parasitic parameters K1 drive parameters K1 equivalent experiments SP 454 OP 461 LK http://dx.doi.org/https://doi.org/10.1109/ICNEPE60694.2023.10429739 DO https://doi.org/10.1109/ICNEPE60694.2023.10429739 SF ELIB - SuUB Bremen
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