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1 Ergebnisse
1
Impact of Device Geometry, Physical Doping and Electrostati..:
, In:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Palmieri, Andrea
;
Cherkaoui, Karim
;
Aabrar, Khandker Akif
... - p. 1-3 , 2023
Link:
https://doi.org/10.1109/EDTM55494.2023.10438104
RT T1 <cTitle>2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Impact of Device Geometry, Physical Doping and Electrostatic Doping on the Frequency CV-dispersion of TFT Devices with IWO Channels</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10438104&Exemplar=1&LAN=DE A1 Palmieri, Andrea A1 Cherkaoui, Karim A1 Aabrar, Khandker Akif A1 Hu, Yaoqiao A1 Larcher, Luca A1 Cho, Kyeongjae A1 Datta, Suman A1 Hurley, Paul A1 Pesic, Milan YR 2023 K1 Geometry K1 Semiconductor device measurement K1 Doping K1 Frequency measurement K1 Semiconductor process modeling K1 Electrostatics K1 Dispersion K1 IWO K1 TFT K1 logic K1 Scaling K1 split-CV SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM55494.2023.10438104 DO https://doi.org/10.1109/EDTM55494.2023.10438104 SF ELIB - SuUB Bremen
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