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Reduction of Subthreshold Leakage Using Metal Strip in SGO ..:
, In:
2023 9th International Conference on Signal Processing and Communication (ICSC)
,
Bhaumik, Arup S.
;
Kumar, Satyendra
;
Chaturvedi, Saurabh
... - p. 769-773 , 2023
Link:
https://doi.org/10.1109/ICSC60394.2023.10441253
RT T1
2023 9th International Conference on Signal Processing and Communication (ICSC)
: T1
Reduction of Subthreshold Leakage Using Metal Strip in SGO Double-Gate MOSFET
UL https://suche.suub.uni-bremen.de/peid=ieee-10441253&Exemplar=1&LAN=DE A1 Bhaumik, Arup S. A1 Kumar, Satyendra A1 Chaturvedi, Saurabh A1 Singh, Km. Sucheta A1 Kumar, Yogesh A1 Tyagi, Kapil Dev A1 Kashyap, Abhishek YR 2023 SN 2643-444X K1 MOSFET K1 Switches K1 Logic gates K1 Capacitance K1 Transistors K1 Subthreshold current K1 Transconductance K1 Subthreshold leakage K1 transconductance K1 double-gate MOSFET K1 metal strip K1 stack-gate-oxide SP 769 OP 773 LK http://dx.doi.org/https://doi.org/10.1109/ICSC60394.2023.10441253 DO https://doi.org/10.1109/ICSC60394.2023.10441253 SF ELIB - SuUB Bremen
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