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1 Ergebnisse
1
30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Ma..:
, In:
2024 IEEE International Solid-State Circuits Conference (ISSCC)
,
Song, Jiahao
;
Wu, Zihan
;
Tang, Xiyuan
... - p. 490-492 , 2024
Link:
https://doi.org/10.1109/ISSCC49657.2024.10454272
RT T1 <cTitle>2024 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Machine Featuring 15-Level Coefficients and Leaked Negative-Feedback Annealing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10454272&Exemplar=1&LAN=DE A1 Song, Jiahao A1 Wu, Zihan A1 Tang, Xiyuan A1 Xu, Bocheng A1 Luo, Haoyang A1 Yang, Youming A1 Wang, Yuan A1 Wang, Runsheng A1 Huang, Ru YR 2024 SN 2376-8606 K1 Annealing K1 Power demand K1 Parallel processing K1 Solid state circuits K1 Planning K1 Time factors K1 Synchronization SP 490 OP 492 LK http://dx.doi.org/https://doi.org/10.1109/ISSCC49657.2024.10454272 DO https://doi.org/10.1109/ISSCC49657.2024.10454272 SF ELIB - SuUB Bremen
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