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13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Tech..:

, In: 2024 IEEE International Solid-State Circuits Conference (ISSCC),

Kawai, Koichi ; Einaga, Yuichi ; Oikawa, Yoko... - p. 244-246 , 2024

Link: https://doi.org/10.1109/ISSCC49657.2024.10454296

RT 
T1 <cTitle>2024 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10454296&Exemplar=1&LAN=DE
				
A1 Kawai, Koichi
A1 Einaga, Yuichi
A1 Oikawa, Yoko
A1 He, Yankang
A1 Iorio, Biagio
A1 Yamada, Shigekazu
A1 Kamata, Yoshihiko
A1 Iwasaki, Tomoko
A1 D'Alessandro, Andrea
A1 Yu, Erwin
A1 Muralidharan, Arvind
A1 Li, Qinge
A1 Nguyen, Henry
A1 Chan, Kim-Fung
A1 Piccardi, Michele
A1 Ichikawa, Takaaki
A1 Yu, Jeff
A1 Wang, Guan
A1 Kim, Kwangwon
A1 Kim, Chulbum
A1 Mangalindan, Paolo
A1 Yun, Hojung
A1 Nubile, Luca
A1 Verma, Kapil
A1 Bhushan, Sushanth
A1 Srinivasan, Dheeraj
A1 Kuge, Hidehiko
A1 Subramanian, Rajesh
A1 Kishimoto, Jiro
A1 Kamijo, Toru
A1 Musunuri, Padma
A1 Siau, Chang
A1 Ghodsi, Ramin
YR 2024
SN 2376-8606
K1 Data centers
K1 Bandwidth
K1 Throughput
K1 Solid state circuits
K1 Artificial intelligence
SP 244
OP 246
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC49657.2024.10454296
DO https://doi.org/10.1109/ISSCC49657.2024.10454296
SF ELIB - SuUB Bremen

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