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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28..:

, In: 2024 IEEE International Solid-State Circuits Conference (ISSCC),

Jung, Wontaeck ; Kim, Hyunggon ; Kim, Do-Bin... - p. 236-237 , 2024

Link: https://doi.org/10.1109/ISSCC49657.2024.10454343

RT 
T1 <cTitle>2024 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10454343&Exemplar=1&LAN=DE
				
A1 Jung, Wontaeck
A1 Kim, Hyunggon
A1 Kim, Do-Bin
A1 Kim, Tae-Hyun
A1 Lee, Namhee
A1 Shin, Dongjin
A1 Kim, Minyoung
A1 Rho, Youngsik
A1 Lee, Hun-Jong
A1 Hyun, Yujin
A1 Park, Jaeyoung
A1 Kim, Taekyung
A1 Kim, Hwiwon
A1 Lee, Gyeongwon
A1 Lee, Jisang
A1 Jang, Joonsuc
A1 Park, Jungmin
A1 Kim, Sion
A1 Jeon, Su Chang
A1 Kim, Suyong
A1 Song, Jung-Ho
A1 Kim, Min-Seok
A1 Lee, Taesung
A1 Chun, Byung-Kwan
A1 Kim, Tongsung
A1 Lee, Young Gyu
A1 Lee, Hokil
A1 Lee, Soowoong
A1 Lee, Hwaseok
A1 Cho, Dooho
A1 Nam, Sang-Wan
A1 Kim, Yeomyung
A1 Yoon, Kunyong
A1 Lee, Yoonjae
A1 Kim, Sunghoon
A1 Hwang, Jungseok
A1 Song, Raehyun
A1 Jang, Hyunsik
A1 Son, Jaeick
A1 Jeon, Hongsoo
A1 Lee, Myunghun
A1 Lee, Mookyung
A1 Kim, Kisung
A1 Lee, Eungsuk
A1 Lee, Myeongwoo
A1 Jo, Sungkyu
A1 Kim, Chan Ho
A1 Park, Jong Chul
A1 Yun, Kyunghwa
A1 Seol, Soonock
A1 Cho, Ji-Ho
A1 Lee, Seungjae
A1 Lee, Jin-Yub
A1 Hur, Sung-Hoi
YR 2024
SN 2376-8606
K1 Costs
K1 Explosives
K1 System-on-chip
K1 Solid state circuits
K1 Flash memories
SP 236
OP 237
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC49657.2024.10454343
DO https://doi.org/10.1109/ISSCC49657.2024.10454343
SF ELIB - SuUB Bremen

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