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1 Ergebnisse
1
3.9 A 1.2V High-Voltage-Tolerant Bootstrapped Analog Sample..:
, In:
2024 IEEE International Solid-State Circuits Conference (ISSCC)
,
Lee, Sangheon
;
Park, Jinwoo
;
Park, Junsang
... - p. 70-72 , 2024
Link:
https://doi.org/10.1109/ISSCC49657.2024.10454351
RT T1
2024 IEEE International Solid-State Circuits Conference (ISSCC)
: T1
3.9 A 1.2V High-Voltage-Tolerant Bootstrapped Analog Sampler in 12-bit SAR ADC Using 3nm GAA's 0.7V Thin-Gate-Oxide Transistor
UL https://suche.suub.uni-bremen.de/peid=ieee-10454351&Exemplar=1&LAN=DE A1 Lee, Sangheon A1 Park, Jinwoo A1 Park, Junsang A1 Lee, Sangkyu A1 Lee, Jungho A1 Cho, Youngjae A1 Choi, Michael A1 Shin, Jongshin YR 2024 SN 2376-8606 K1 Gallium arsenide K1 Voltage K1 High-voltage techniques K1 Logic gates K1 FinFETs K1 Transistors K1 Integrated circuit reliability SP 70 OP 72 LK http://dx.doi.org/https://doi.org/10.1109/ISSCC49657.2024.10454351 DO https://doi.org/10.1109/ISSCC49657.2024.10454351 SF ELIB - SuUB Bremen
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