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13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Pow..:

, In: 2024 IEEE International Solid-State Circuits Conference (ISSCC),

Lee, Jinhyung ; Cho, Kyungjun ; Lee, Chang Kwon... - p. 238-240 , 2024

Link: https://doi.org/10.1109/ISSCC49657.2024.10454440

RT 
T1 <cTitle>2024 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10454440&Exemplar=1&LAN=DE
				
A1 Lee, Jinhyung
A1 Cho, Kyungjun
A1 Lee, Chang Kwon
A1 Lee, Yeonho
A1 Park, Jae-Hyung
A1 Oh, Su-Hyun
A1 Ju, Yucheon
A1 Jeong, Chunseok
A1 Cho, Ho Sung
A1 Lee, Jaeseung
A1 Yun, Tae-Sik
A1 Cho, Jin Hee
A1 Oh, Sangmuk
A1 Moon, Junil
A1 Park, Young-Jun
A1 Choi, Hong-Seok
A1 Kim, In-Keun
A1 Yang, Seung Min
A1 Kim, Sun-Yeol
A1 Jang, Jaemin
A1 Kim, Jinwook
A1 Lee, Seong-Hee
A1 Jeon, Younghyun
A1 Park, Juhyung
A1 Kim, Tae-Kyun
A1 Ka, Dongyoon
A1 Oh, Sanghoon
A1 Kim, Jinse
A1 Jeon, Junyeol
A1 Kim, Seonhong
A1 Kim, Kyeong Tae
A1 Kim, Taeho
A1 Yang, Hyeonjin
A1 Yang, Dongju
A1 Lee, Minseop
A1 Song, Heewoong
A1 Jang, Dongwook
A1 Shin, Junghyun
A1 Kim, Hyunsik
A1 Baek, Changki
A1 Jeong, Hajun
A1 Yoon, Jongchan
A1 Lim, Seung-Kyun
A1 Lee, Kyo Yun
A1 Koo, Young Jun
A1 Park, Myeong-Jae
A1 Cho, Joohwan
A1 Kim, Jonghwan
YR 2024
SN 2376-8606
K1 Generative AI
K1 Memory management
K1 Random access memory
K1 Bandwidth
K1 Voltage
K1 Reliability engineering
K1 Solid state circuits
SP 238
OP 240
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC49657.2024.10454440
DO https://doi.org/10.1109/ISSCC49657.2024.10454440
SF ELIB - SuUB Bremen

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