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1 Ergebnisse
1
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Mac..:
, In:
2024 IEEE International Solid-State Circuits Conference (ISSCC)
,
Wen, Tai-Hao
;
Hsu, Hung-Hsi
;
Khwa, Win-San
... - p. 580-582 , 2024
Link:
https://doi.org/10.1109/ISSCC49657.2024.10454468
RT T1 <cTitle>2024 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10454468&Exemplar=1&LAN=DE A1 Wen, Tai-Hao A1 Hsu, Hung-Hsi A1 Khwa, Win-San A1 Huang, Wei-Hsing A1 Ke, Zhao-En A1 Chin, Yu-Hsiang A1 Wen, Hua-Jin A1 Chang, Yu-Chen A1 Hsu, Wei-Ting A1 Lo, Chung-Chuan A1 Liu, Ren-Shuo A1 Hsieh, Chih-Cheng A1 Tang, Kea-Tiong A1 Teng, Shih-Hsin A1 Chou, Chung-Cheng A1 Chih, Yu-Der A1 Chang, Tsung-Yung Jonathan A1 Chang, Meng-Fan YR 2024 SN 2376-8606 K1 Phase change materials K1 Program processors K1 Nonvolatile memory K1 Interference K1 In-memory computing K1 Batteries K1 System-on-chip SP 580 OP 582 LK http://dx.doi.org/https://doi.org/10.1109/ISSCC49657.2024.10454468 DO https://doi.org/10.1109/ISSCC49657.2024.10454468 SF ELIB - SuUB Bremen
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