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1 Ergebnisse
1
Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiC..:
, In:
2023 International Conference on Noise and Fluctuations (ICNF)
,
Belie, A. Adebabay
;
El Beyrouthy, J.
;
Pascal, F.
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/ICNF57520.2023.10472764
RT T1
2023 International Conference on Noise and Fluctuations (ICNF)
: T1
Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors
UL https://suche.suub.uni-bremen.de/peid=ieee-10472764&Exemplar=1&LAN=DE A1 Belie, A. Adebabay A1 El Beyrouthy, J. A1 Pascal, F. A1 Boch, J. A1 Maraine, T. A1 Hoffmann, A. A1 Bouhouche, M. A1 Sagnes, B. A1 Haendler, S. A1 Chevalier, P. A1 Gloria, D. YR 2023 SN 2575-5595 K1 Bipolar transistors K1 Doping K1 Medium voltage K1 High-voltage techniques K1 SPICE K1 BiCMOS integrated circuits K1 1/f noise K1 G-R noise K1 HBTs K1 Si/SiGe BiCMOS K1 X-ray irradiation K1 Total Ionizing Dose (TID) K1 Gummel-Plot SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICNF57520.2023.10472764 DO https://doi.org/10.1109/ICNF57520.2023.10472764 SF ELIB - SuUB Bremen
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