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1 Ergebnisse
1
Recent Developments in Understanding the Gate Switching Ins..:
, In:
2023 IEEE International Integrated Reliability Workshop (IIRW)
,
Feil, Maximilian W.
;
Waschneck, Katja
;
Reisinger, Hans
... - p. 1-9 , 2023
Link:
https://doi.org/10.1109/IIRW59383.2023.10477632
RT T1
2023 IEEE International Integrated Reliability Workshop (IIRW)
: T1
Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-10477632&Exemplar=1&LAN=DE A1 Feil, Maximilian W. A1 Waschneck, Katja A1 Reisinger, Hans A1 Berens, Judith A1 Aichinger, Thomas A1 Prigann, Sven A1 Pobegen, Gregor A1 Salmen, Paul A1 Rescher, Gerald A1 Gustin, Wolfgang A1 Grasser, Tibor YR 2023 SN 2374-8036 K1 Temperature measurement K1 Temperature K1 Silicon carbide K1 Spontaneous emission K1 Switches K1 Logic gates K1 Threshold voltage K1 silicon carbide K1 wide-bandgap K1 MOSFET K1 threshold voltage K1 drift K1 bias temperature instability K1 gate switching instability K1 gate switching stress SP 1 OP 9 LK http://dx.doi.org/https://doi.org/10.1109/IIRW59383.2023.10477632 DO https://doi.org/10.1109/IIRW59383.2023.10477632 SF ELIB - SuUB Bremen
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