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Current Driven Modeling and SILC Investigation of Oxide Bre..:
, In:
2023 IEEE International Integrated Reliability Workshop (IIRW)
,
Garba-Seybou, Tidjani
;
Bravaix, Alain
;
Federspiel, Xavier
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/IIRW59383.2023.10477634
RT T1
2023 IEEE International Integrated Reliability Workshop (IIRW)
: T1
Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applications
UL https://suche.suub.uni-bremen.de/peid=ieee-10477634&Exemplar=1&LAN=DE A1 Garba-Seybou, Tidjani A1 Bravaix, Alain A1 Federspiel, Xavier A1 Hai, Joycelyn A1 Diouf, Cheikh A1 Cacho, Florian YR 2023 SN 2374-8036 K1 Semiconductor device modeling K1 Radio frequency K1 Temperature sensors K1 Temperature measurement K1 Breakdown voltage K1 Silicon-on-insulator K1 Logic gates K1 CMOS K1 Off-state damage K1 charge trapping K1 interface traps K1 soft and hard breakdown K1 SILC K1 current SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IIRW59383.2023.10477634 DO https://doi.org/10.1109/IIRW59383.2023.10477634 SF ELIB - SuUB Bremen
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