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1 Ergebnisse
1
A Physics-Informed Artificial Neural Network Modeling Appro..:
, In:
2023 International Conference on Sensing, Measurement & Data Analytics in the era of Artificial Intelligence (ICSMD)
,
Yang, Wenhao
;
Sun, Yuyin
;
Qi, Mengnan
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/ICSMD60522.2023.10490903
RT T1 <cTitle>2023 International Conference on Sensing, Measurement & Data Analytics in the era of Artificial Intelligence (ICSMD)</cTitle>: T1 <Title>A Physics-Informed Artificial Neural Network Modeling Approach for Wide Temperature Range 4H-SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10490903&Exemplar=1&LAN=DE A1 Yang, Wenhao A1 Sun, Yuyin A1 Qi, Mengnan A1 Mao, Shasha A1 Zhang, Yimeng A1 Zhang, Yuming A1 Bai, Song YR 2023 K1 Semiconductor device modeling K1 MOSFET K1 Temperature distribution K1 Smoothing methods K1 Training data K1 Artificial neural networks K1 Predictive models K1 Physical Information K1 ANN K1 Device Modeling K1 SiC MOSFETs SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICSMD60522.2023.10490903 DO https://doi.org/10.1109/ICSMD60522.2023.10490903 SF ELIB - SuUB Bremen
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