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1 Ergebnisse
1
Completely Filling of Through-Silicon-Vias with High Aspect..:
, In:
2023 24th International Conference on Electronic Packaging Technology (ICEPT)
,
Wang, Manyu
;
Li, Ke
;
Bao, Shuchao
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/ICEPT59018.2023.10492061
RT T1 <cTitle>2023 24th International Conference on Electronic Packaging Technology (ICEPT)</cTitle>: T1 <Title>Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10492061&Exemplar=1&LAN=DE A1 Wang, Manyu A1 Li, Ke A1 Bao, Shuchao A1 Liu, Zhongliang A1 Zhu, Yunting A1 Wang, Jiahui A1 Xia, Qifei A1 Wu, Shaocheng A1 Yu, Daquan YR 2023 SN 2836-9734 K1 Electrochemical deposition K1 Silicon compounds K1 Mass production K1 Films K1 Atomic layer deposition K1 Physical vapor deposition K1 Plating K1 Through Silicon Via K1 Atomic Layer Deposition K1 Electroplating K1 High Cavity Physical Vapor Deposition SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICEPT59018.2023.10492061 DO https://doi.org/10.1109/ICEPT59018.2023.10492061 SF ELIB - SuUB Bremen
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